S8: Advances in Memory Devices

A range of future data storage solutions are under development worldwide, including phase change, flash, ferroelectric, resistive, magnetic, spintronic, and optical systems. These implement a range of ceramic materials, including semiconductors, glasses, perovskites, ferroics, and multifunctionals. The benefits and limitations for each balance oftencompeting requirements in terms of data density, power consumption, speed, and reliability, with cost, manufacturability, and scalability also necessarily important. Toward overcoming challenges to extend and improve current memory technologies, this symposium will feature presentations on new materials, designs, and fabrication methods, along with those emphasizing advances in characterization, modeling, and operating conditions. Contributions will focus on improving ultimate device performance, extending current technologies, decreasing energy consumption, and common challenges and solutions across memory
platforms.
Proposed Symposium Topics
- Resistive memories
- Charge storage systems
- Ferroelectrics
- Thermal storage
- Optical and Magnetic devices
- Common Challenges and Solutions
Symposium Organizers
- Bryan D. Huey, University of Connecticut, USA
- Glen Fox, Fox Materials Consulting, USA




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