Group-III-nitride semiconductors have considerable potential for electronic and optoelectronic applications, but unintended defects tend to form in their structure during fabrication, which may affect the electrical properties. Two researchers at the University of British Columbia detailed the striking contrast between the effects of threading dislocation lines in gallium nitride versus indium nitride.
Read MoreOther materials stories that may be of interest on April 8, 2014.
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