Group-III-nitride semiconductors have considerable potential for electronic and optoelectronic applications, but unintended defects tend to form in their structure during fabrication, which may affect the electrical properties. Two researchers at the University of British Columbia detailed the striking contrast between the effects of threading dislocation lines in gallium nitride versus indium nitride.
Read MoreAfter a series of delays, the United Kingdom finally announced its strategy, as well as a new Japanese partnership, for supporting the semiconductor industry. Details of these plans—as well as industry response so far—are given in today’s CTT.
Read MoreTo date, efforts to study carrier dynamics in semiconductor materials have primarily focused on narrow bandgap semiconductors. Researchers at the University of California, Berkeley, propose a method that combines ultrafast nanoscale measurements and theoretical modeling to probe carrier behavior in semiconductors with wider bandgaps.
Read MoreThe April 2022 issue of the ACerS Bulletin—featuring ferroelectric materials for negative capacitance electronics—is now available online. Plus—new C&GM.
Read MoreElastic strain engineering is an emerging technique for enhancing the performance of functional materials. An international collaboration involving Skoltech, MIT, and Nanyang Technological University developed an expanded machine learning framework to accelerate the exploration of how strain affects semiconductor properties.
Read MoreImproved technique for scattering-type scanning near-field optical microscopy, novel cryogenic near-field optical microscope, and other materials stories that may be of interest for May 30, 2018.
Read MoreInspired by origami, researchers have created a tiny robot exoskeleton that bends and moves in response to chemical or thermal changes. These tiny machines can be used in electronics applications as well as semiconductor manufacturing.
Read More