S6 – Emerging Semiconductor Materials and Interfaces

This symposium focuses on recent advances in new materials and interfaces ranging from semiconductors to advanced quantum materials. These are poised to shift current paradigms extending from novel optoelectronic and photonic devices, power electronics, high frequency electronics, photovoltaics, to emerging quantum technologies. Topics of interest include wide-band-gap oxides for high power electronics, strong light-matter interactions in chalcogenides, heterointerfaces ranging from traditional semiconductors with functional oxides to topological materials with superconductors, quantum spin-liquid systems, stable and all-inorganic perovskites for high-efficiency solar cells, rational design of new functional semiconductors, control over defects and dopants, advances in synthesis, theory and modeling, and characterization.

The goal of this symposium is to provide an international and interdisciplinary forum for researchers with expertise in theory and modeling, synthesis, characterization, and device fabrication and measurements to discuss key challenges and opportunities in these emerging materials.

Proposed Sessions 

• Wide bandgap and ultra-wide bandgap semiconductor thin films and heterojunctions
• Chalcogenide thin films with novel optical and electrical properties
• Integration of functional oxides with semiconductors
• Interfacing topological superconductors and spin-liquids for emerging quantum technologies
• Rational design of functional semiconductors and quantum materials
• Advances in thin film synthesis
• Control and characterization over defects and dopants

Symposium Organizers 

• Matthew Brahlek, Oak Ridge National Laboratory, USA, brahlekm@ornl.gov
• Rohan Mishra, Washington University in St. Louis, USA, rmishra@wustl.edu
• Jaekwang Lee, Pusan National University, South Korea, jaekwangl@pusan.ac.kr
• Sriram Krishnamoorthy, University of California, Santa Barbara, USA, sriramkrishnamoorthy@ucsb.edu