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January 25th, 2010

The Influence of ZnF2 Doping on the Electrical Properties and Microstructure in Bi2O3–ZnO-Based Varistors

Published on January 25th, 2010 | By: Eileen De Guire

Volume 93 Issue 1, Pages 44 – 47

 

Lihong Cheng, Liaoying Zheng, Guorong Li, Kaiyang Yuan, Yan Gu, Fuping Zhang
Published Online: Dec 3 2009 4:50PM
DOI: 10.1111/j.1551-2916.2009.03386.x

 

ABSTRACT
ZnO varistors with different amounts of ZnF2 from 0.00 to 0.80 mol% were prepared using a solid-state reaction technique, to explore the potential application of ZnO. The F-doping effects on the microstructure and electrical properties of ZnO-based varistors were investigated. The average grain size of ZnO increased from 4.93 to 6.48 μm as the ZnF2 content increased. Experimental results showed that as the ZnF2 content increased, the breakdown voltage decreased from 617 to 367 V/mm, and the nonlinear coefficient did not change much. However, a slight increase was observed in the leakage current. Besides, when the ZnF2 content increased, the donor concentration increased from 0.669 × 1018 to 8.720 × 1018 cm-3. The study indicated that ZnF2 played a similar role as sintering aids to promote grain growth and the substitutional F atoms in the bulk served as a donor to increase the donor concentration.

 

Online Access to Journal of the American Ceramic Society


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