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Chinese academy reports ZnO nanorod FET breakthrough

By / October 25, 2008

The Chinese Academy of Science reports that scientists at its Institute of Microelectronics have successfully formed a zinc oxide nanorod field-effect transistor, the “first of its kind as a nano device.” The ZnO nano materials, such as nanowires, nanorods, nanobands and nanorings, attract intense worldwide attention for their unique optical, semiconducting and piezoelectric properties. At…

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