Hafnium oxide-based ferroelectrics are promising materials for nonvolatile memory devices, as they are compatible with modern semiconductor technologies. Researchers led by the Moscow Institute of Physics and Technology came up with a unique method to better characterize these materials.
Read MoreBy processing samples of silicon nitride under high pressure and heat, researchers at the Deutsches Elektronen-Synchrotron have converted an originally opaque hexagonal crystal structure into optically transparent cubic silicon nitride.
Read MoreA group of researchers from the Deutsches Elektronen-Synchrotron, Hamburg University of Technology, and Nestle has taken chocolately materials science goodness a step further by studying just how fat bloom forms on the surface of chocolate.
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