FET Archives | The American Ceramic Society

FET

Molybdenum disulfide field-effect transistors make supersensitive biosensors

By April Gocha / September 12, 2014

Researchers at the University of California Santa Barbara have fabricated a molybdenum disulfide field-effect transistor—which holds great promise as a single molecule biosensor—that’s 74 times more sensitive than those of graphene.

Read More

Other materials stories that may be of interest

By Jim Destefani / October 28, 2013

Other materials stories that may be of interest.

Read More

Berkeley Lab group achieves tunable bandgap in graphene

By / June 10, 2009

(Abbreviations fixed – h/t to reader Bob Gottschall) The use of graphene as a full-function transistor is a step closer.  A team at the Berkeley National Lab led by Feng Wang has figured out a way to create a bandgap in bilayer graphene that can be precisely controlled from 0 to 250 milli-electron volts at…

Read More

MIT calls graphene a “material for all seasons”

By RussJordan / May 21, 2009

A recent article in MIT Tech Talk describes aspects of several exciting graphene research projects at MIT. A successor to silicon? Graphene could become the successor to silicon in a new generation of microchips because of its unique electrical characteristics. Graphene could surmount the basic physical constraints that limit further development of smaller, faster chips.…

Read More

Chinese academy reports ZnO nanorod FET breakthrough

By / October 25, 2008

The Chinese Academy of Science reports that scientists at its Institute of Microelectronics have successfully formed a zinc oxide nanorod field-effect transistor, the “first of its kind as a nano device.” The ZnO nano materials, such as nanowires, nanorods, nanobands and nanorings, attract intense worldwide attention for their unique optical, semiconducting and piezoelectric properties. At…

Read More