Glasgow University

Silicate layer is key to low temperature bonding of silicon carbide

By Eileen De Guire / February 13, 2012

A method for bonding silicon carbide has been developed at the University of Glasgow. This image shows a join between silicon ingots that was made in a similar way. Credit: Christian Killow; Univ. Glasgow. An online story in The Engineer last week reiterated for me the practical benefits of basic science research. Researchers at University…

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