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Griffith University

Silicon carbide’s ‘superiority’ makes for promising silicon semiconductor substitute in high-performance sensors

By Jessica McMathis / February 18, 2015

Researchers at the Queensland Micro- and Nanotechnology Centre (QMNC) at Griffith University (Australia) have shown that silicon carbide’s “superiority” in not-so-superior conditions make the compound a promising substitute for silicon semiconductors in devices with mechanical and electrical sensors.

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Other materials stories that may be of interest

By Eileen De Guire / June 4, 2013

Epitaxial SiC films grown on 300mm silicon wafers The Queensland Micro and Nanotechnology Facility of Griffith University (Brisbane, AU) and industry partner SPTS Technologies, a Newport, UK, supplier of advanced wafer processing solutions for semiconductor and related markets, have developed a process for epitaxial growth of 3C silicon carbide films on 300mm silicon wafers. The…

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