MOSFETs

Beyond the fundamental limits of electronics: Ferroelectric gate oxides for negative capacitance transistors

By Lisa McDonald / March 1, 2022

Metal–oxide–semiconductor field-effect transistors are integral to modern electronics. As miniaturization reaches its limits to further improve the efficiency of MOSFETs, researchers are looking to replacing certain parts of the device with ferroelectric materials.

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Silicon carbide manufacturing process to lower barriers for SiC power electronics

By April Gocha / October 6, 2017

North Carolina State University researchers have developed a silicon carbide manufacturing process that may finally give this material the boost it needs to compete against silicon in the power electronics market.

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