Ferroelectric field-effect transistors are nonvolatile memory devices that nondestructively read stored data. However, data retention times in these devices are short. Purdue University researchers suggest a modification to conventional Fe-FET structure could overcome this obstacle.
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Hafnium oxide-based ferroelectrics are promising materials for nonvolatile memory devices, as they are compatible with modern semiconductor technologies. Researchers led by the Moscow Institute of Physics and Technology came up with a unique method to better characterize these materials.
Read MoreFerroelectric lead titanate nanodots were shattered using an atomic force microscope tip to make nanodots less than 10 nm diameter. Credit: Son and Jung, JACerS; Wiley. Jim O’Neil, a fellow graduate…
Read MoreOptical vortex generated using a radial polarization converter. Credit: Altechna; Kazansky et al., University of Southampton. Back in May, University of Southampton researchers published a short paper in Applied Physics Letters…
Read MoreZinc oxide nanostructures are synthesized in parallel microfluidic channels (held by the metal frame) by flowing reactants through the tubing. The microfluidic structure creates the device and also becomes the…
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