North Carolina State University researchers have developed a silicon carbide manufacturing process that may finally give this material the boost it needs to compete against silicon in the power electronics market.
Read More
IBM scientists report that they have developed a simple technique to peel extremely thin layers of gallium nitride from a bulk wafer of the material—a breakthrough in manufacturing techniques for this expensive material.
Read More
MIT spinout company Cambridge Electronics Inc. is helping gallium nitride get into the center ring with its recent announcement of “a line of GaN transistors and power electronic circuits that promise to cut energy usage in data centers, electric cars, and consumer devices by 10 to 20 percent worldwide by 2025,” according to an MIT News article.
Read More