Electronics

Low-temperature synthesis of mesoporous metal oxides unlocks flexible electronic integration

By Guest Contributor / March 8, 2024

In a recent paper, researchers from various universities in the Republic of Korea developed a low-temperature process for synthesizing mesoporous metal oxides, which unlocks the possibility of integrating these materials onto flexible electronics.

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EMA 2024 debuts in Denver

By Amanda Engen / February 28, 2024

The Electronic Materials and Applications Conference moved from its original home in Florida to Denver, Colo., taking place Feb. 13–16, 2024. More than 330 attendees, of which nearly a third were students, attended the conference.

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Rinse and repeat: Water replaces toxic chemicals in printed electronics processing

By Lisa McDonald / February 9, 2024

Printable electronic inks and their associated print processes tend to rely on environmentally hazardous chemicals, which offsets the benefits of printed electronics in application. Engineers at Duke University developed a water-only printing process for fabricating printed electronics.

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Introduction to “Piezoelectric and dielectric ceramics” for ACT @ 20

By Jonathon Foreman / December 15, 2023

To celebrate the milestone of the 20th volume of the International Journal of Applied Ceramic Technology, the editorial team assembled a selection of journal papers representing the excellent work from the advanced ceramics community. The focus this month is piezoelectric and dielectric ceramics.

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Introduction to “Thermoelectrics” for ACT @ 20

By Jonathon Foreman / November 21, 2023

To celebrate the milestone of the 20th volume of the International Journal of Applied Ceramic Technology, the editorial team assembled a selection of journal papers representing the excellent work from the advanced ceramics community. The focus this month is thermoelectrics.

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Electronics in space—high-temperature electrical tests reveal potential of various packaging materials for silicon carbide sensors

By Lisa McDonald / November 21, 2023

Silicon carbide electronics are expected to play a role in future space missions to hot celestial bodies, such as Venus and the sun. A new study by researchers at NASA Glenn Research Center investigated the electrical properties of several ceramic and glass packaging materials to determine which would best protect silicon carbide electronics at temperatures of more than 800°C.

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Advancing the quantum world’s new best friend—researchers stabilize charge states in hexagonal boron nitride

By Guest Contributor / October 13, 2023

Hexagonal boron nitride has recently emerged as a potential material for hosting qubits, the basic unit of quantum information, on a smaller scale than diamonds, the traditional go-to material for quantum systems. Now, researchers at the University of Technology Sydney in Australia described a way to stabilize charge states in hexagonal boron nitride.

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Propelling GaN electronics adoption, plus more inside September 2023 ACerS Bulletin

By Lisa McDonald / September 7, 2023

The September 2023 issue of the ACerS Bulletin—featuring an overview of the current gallium nitride-based device market—is now available online. Plus—ACerS Awards of 2023 and C&GM.

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A charged finding—effect of threading dislocation lines on conductivity in gallium nitride versus indium nitride

By Lisa McDonald / May 26, 2023

Group-III-nitride semiconductors have considerable potential for electronic and optoelectronic applications, but unintended defects tend to form in their structure during fabrication, which may affect the electrical properties. Two researchers at the University of British Columbia detailed the striking contrast between the effects of threading dislocation lines in gallium nitride versus indium nitride.

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New ultrafast optical nanoscopy method measures carrier dynamics in wider bandgap semiconductors

By Lisa McDonald / February 21, 2023

To date, efforts to study carrier dynamics in semiconductor materials have primarily focused on narrow bandgap semiconductors. Researchers at the University of California, Berkeley, propose a method that combines ultrafast nanoscale measurements and theoretical modeling to probe carrier behavior in semiconductors with wider bandgaps.

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