January 28, 2010

Volume 6 Issue 6, Pages 687 – 691

Jong-Jin Choi, Jungho Ryu, Byung-Dong Hahn, Woon-Ha Yoon, Dong-Soo Park
Published
Online: Dec 11 2008 11:49AM

DOI: 10.1111/j.1744-7402.2008.02333.x

ABSTRACT
A conducting 8-μm-thick LaNiO3 (LNO) film was
deposited on a Ti substrate by aerosol deposition for use as a diffusion
barrier between a lead zirconate titanate (PZT) and a Ti substrate
during postannealing. The deposited 20-μm-thick PZT films were annealed
at 800°C. The PZT film deposited without LNO was cracked and partially
detached from the substrate after postannealing, presumably due to a
severe reaction with the Ti substrate, while no significant reactions
were observed when the LNO buffer layer was used. The remnant
polarization and relative dielectric constant of the 20-μm-thick
annealed PZT films deposited on the LNO-buffered Ti substrate were
43 μC/cm2 and 1010, respectively.

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