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January 28th, 2010

The Effect of Dopants on the Dielectric Properties of Ba(B’1/2Ta1/2)O3 (B’=La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Y, Yb, and In) Microwave Ceramics

Published on January 28th, 2010 | By: pwray@ceramics.org

Datum

 

Lamrat Abdul Khalam, Prabhakaran Sreekumari Anjana, Mailadil Thomas
Sebastian
Published Online: Nov 5 2008 3:07PM

DOI: 10.1111/j.1744-7402.2008.02307.x

 

ABSTRACT
Low-loss dielectric ceramics based on Ba(B’1/2Ta1/2)O3
(B’=La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Y, Yb, and In) complex
perovskites have been prepared by the solid-state ceramic route. The
dielectric properties (ɛr, Qu,
and τf) of the ceramics have been measured in
the frequency range 4–6 GHz by the resonance method. The resonators have
a relatively high dielectric constant and high quality factor. Most of
the compounds have a low coefficient of temperature variation of the
resonant frequencies. The microwave dielectric properties have been
improved by the addition of dopants and by solid solution formation. The
solid solution Ba[(Y1−xPrx)1/2Ta1/2]O3
has x=0.15, with ɛr=33.2,
Qu×f=51,500 GHz,
and τf≈0. The microwave dielectric properties
of Ba(B’1/2Ta1/2)O3
ceramics are found to depend on the tolerance factor (t),
ionic radius, and ionization energy.

 

Online Access to Journal of Applied Ceramic Technology


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