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October 25th, 2008

Chinese academy reports ZnO nanorod FET breakthrough

Published on October 25th, 2008 | By: pwray@ceramics.org

The Chinese Academy of Science reports that scientists at its Institute of Microelectronics have successfully formed a zinc oxide nanorod field-effect transistor, the “first of its kind as a nano device.”

The ZnO nano materials, such as nanowires, nanorods, nanobands and nanorings, attract intense worldwide attention for their unique optical, semiconducting and piezoelectric properties. At present, Chinese scientists in this filed mainly focus their research on material growth and diode development. A research group headed by Prof. Zhang Haiying from IME came up with a unique “bottom-up” method for designing and developing nano devices. Through the regular contact photolithography technology, they employed ZnO nanorods as the channel material and fabricated a metal-oxide-semiconductor FET by combining gate oxide and back gate metal, which displayed satisfying results.

CAS says Zhang and her colleagues will next be working to create smaller diameter nanowires and improve the performance of the devices.


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