S6 – Complex Oxide and Chalcogenide Semiconductors: Research and Applications

Many technologies that power the information age are based on covalent semiconductors such as Si and GaAs. Despite this success, harnessing phenomena such as magnetism, superconductivity, metal-insulator transitions, ferroelectricity, etc. (and coupled combinations thereof) for future applications requires a thorough understanding of electronic materials with varying degrees of iconicity and structural complexity. To this end, this symposium will bring together scientists and engineers to discuss the status and the outlook for research and applications of emerging oxide and chalcogenide semiconductors broadly, with an emphasis on the common challenges and opportunities in complex-structured materials. Complex structure is meant to include both atomic structure (e.g. perovskites, spinels, delafossites) and nanometer-scale structure (e.g. heterostructures, superlattices, nanocrystals). Topics to be covered include a wide range of studies from theory, materials synthesis, and characterization, to devices and applications.

Proposed Sessions

• Theoretical materials design
• Making complex-structured semiconductors
• Advanced characterization of physical and chemical properties
• Low dimensional systems: layered materials and nanocrystals

Symposium Organizers

• Rafael Jaramillo, Massachusetts Institute of Technology, USA, rjaramil@mit.edu
• Ryan Comes, Auburn University, USA, comes@auburn.edu
• Andriy Zakutayev, National Renewable Energy Laboratory, USA, Zakutayev@nrel.gov
• Jian Shi, Rensselaer Polytechnic Institute, USA, shij4@rpi.edu