Electronic and mechanical properties that control the function of ceramic devices, such as capacitors and sensors, are highly dependent on the structure and chemistry of grains, grain boundaries, and the subsequently formed grain boundary network. The atomic structure, bonding configuration, defect distribution, segregation behavior of these boundaries, and the overall microstructure of the system are altered by material processing techniques. Developing a fundamental understanding of the effect of processing techniques on modifying these internal interfaces, and in turn, impacting the microstructure of ceramic materials is needed to tailor their properties and optimize their application in device technology.
This symposium explores fundamental research into the modifications of internal interfacial structure and composition as well as microstructure evolution in functional materials as it relates to processing techniques. These processing techniques include sintering, electric fields, high temperature and cryogenic application, and gas environment.
Interface structure and chemistry
- Atomic structure, chemistry, bonding configuration
- Defect and segregation behavior
- In-situ microscopy evaluation
- Grain growth and mobility
- Nanocrystalline ceramics
- Material properties
- Mechanical and electric fields (e.g., SPS, FAST, HIP)
- Extreme temperatures (e.g., cold sintering, SPS)
- Environments (e.g., oxygen, hydrogen)