This symposium focuses on recent advances and developments in advanced microelectronics for next-generation device applications. Topics of interest include devices in memory and data storage, quantum information science, neuromorphic computing, flexible electronics, and optoelectronics. Contributions that connect device design/fabrication, defects, and interface to structure and device performance are of particular interest.

The goal is to create an international and interdisciplinary forum for researchers from industry, academia, and national laboratories to exchange ideas and foster collaboration. Broad areas of interest include modeling and simulation to predict device properties, and the role of defects, interfaces, and synthesis/fabrication processes on device performance. Specific devices of interest are memory and data storage devices based on spintronics and ferroelectrics, memristive devices, neuromorphic systems, transistors, detectors, and flexible electronics.

Proposed Sessions

  • Theory, modeling, and first principles calculations of devices performance and properties
  • Role of defects, interface and synthesis/fabrication process on device properties
  • Ohmic and Schottky contacts for devices
  • Memristive switching and performance
  • Memory and data storage devices based on spintronics and ferroelectrics
  • Neuromorphic computing
  • Next-generation quantum information devices
  • Dielectrics and ferroelectrics for device applications (e.g., gate dielectric and energy storage)
  • High-performance thin film and 2D (e.g., van der Waals heterostructures) transistors/devices
  • Flexible electronics
  • Optoelectronics and detectors (e.g., solar cells, photoelectrochemical water-splitting cells, photodetectors, X-ray detectors)

Symposium Organizers