Chalcogenide alloys, e.g., Sb2Se3 and Ge2Sb2Te5, and oxides like VO2 are solid-solid phase-change materials (PCMs) that hold immense potential in various applications due to their fast, dramatic, and reversible change in electrical and optical properties. In the last decade, significant progress has been achieved in finding alloys with superior switching speeds and contrast between amorphous and crystalline state properties using advanced optoelectronic devices. These advances have led to exciting applications ranging from reconfigurable RF switches to tunable optical metasurfaces and energy-efficient in-memory computing. With a fast-growing academic and industrial interest, the scientific community is dedicating efforts to expanding the library of materials for optimized and application-tailored PCMs and studying the underpinning principles and structure–properties–processing–performance relationships to inform future research in this field. This symposium will bring together the scientists and engineers behind said cutting-edge research to enable an open and expert discussion on opportunities and challenges ahead.
Proposed sessions and topics of interest:
- Fundamentals of phase change materials
- Simulation and computational discovery of phase-change materials
- Synthesis and Characterization of phase-change materials
- Applications and reliability of optical and electronic phase change devices
- Layered, superlattice, and nanocomposite phase-change materials
Organizers:
- Carlos Rios Ocampo, University of Maryland, College Park, USA; ; riosc@umd.edu
- Juejun Hu, Massachusetts Institute of Technology, USA
- Kathleen Richardson, University of Central Florida, USA
- Matthias Wuttig, University of Aachen, Germany
- Syed Ghazi Sarwat, IBM, Switzerland
- Lan Li, Westlake University, China
Sponsored By
