SYMPOSIUM 7: In Situ/Operando Characterization of Nanomaterials

The advancement of new technologies in recent decades has enabled a variety of in situ and operando techniques to study materials behavior and nanostructure evolution in real time. External stimuli can take on many forms, including heating or cooling, mechanical stress, light exposure, electric and/or magnetic fields, reactive gas or liquid environments, and ion irradiation. By capturing real-time materials evolution under external stimulus, we can understand functionality and device operation mechanisms fundamentally in their proposed working environments, which facilitates breakthroughs needed for the development of novel materials systems and devices for future technological applications.

This symposium focuses on recent progress and development of in situ and operando characterization methods to understand functional and structural materials and devices. These techniques use photon, electron, neutron, and X-ray probes to investigate materials and devices, including but not limited to transmission electron microscopy, synchrotron X-ray and neutron diffraction/reflectivity, atomic force microscopy, and optical probes.

Proposed Sessions/Topics

• In situ/operando study of advanced functional materials, including transition metal oxides, transition metal dichalcogenides, halide perovskites, etc.
• In situ/operando study of electronic materials such as Mott insulators, dielectrics, ionics, ferroics, semiconductors, superconductors, etc.
• Operando study of device properties, including batteries, fuel cells, solar cells, memristors, memory devices and others
• In situ study of nanocatalysts in reactive environments
• Real-time investigation of mechanical properties in structural materials
• Advances in operando/in situ characterization methods related to electron, X-ray, and neutron techniques

Symposium Organizer(s)

• Katherine Harmon, Stanford University, USA
• Di Zhang, University of Texas at Arlington, USA
• Alessandro Mazza, Los Alamos National Laboratory, USA
• Hao Zheng, Argonne National Laboratory, USA

Point(s) of Contact

• Katherine Harmon; kharmon@stanford.edu
• Di Zhang; zhang@uta.edu
• Alessandro Mazza; armazza@lanl.gov
• Hao Zheng; zheng@anl.gov

Symposium Sponsor(s)

• Basic Science Division
• Electronics Division