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Electronic Materials and Applications 2016 Award and Plenary Speakers

EMA2016_650x65

 

 

Darrell SchlomDarrell Schlom, Herbert Fisk Johnson Professor of Industrial Chemistry, Cornell University

Title: Thin-Film Alchemy: Using Strain and Dimensionality to Unleash the Hidden Properties of Oxides

 

AbstractGuided by theory, unparalleled properties—those of hidden ground states—are being unleashed by exploiting large strains in concert with the ability to precisely control dimensionality in epitaxial oxide heterostructures.  For example, materials that are not ferroelectric or ferromagnetic in their unstrained state can be transmuted into ferroelectrics, ferromagnets, or materials that are both at the same time.  Similarly, new tunable dielectrics with unparalleled performance have been created.  Our studies reveal details about the microscopic growth mechanism of these phases, which are relevant to preparing multicomponent oxide heterostructures with atomic precision.  A new era for multicomponent oxide materials for electronic applications is upon us:  oxides by design.   

 

Biography: Darrell Schlom is the Herbert Fisk Johnson professor of Industrial Chemistry in the Department of Materials Science and Engineering at Cornell University.  After receiving a B.S. degree from Caltech, he did graduate work at Stanford University, receiving an M.S. in Electrical Engineering and a Ph.D. in Materials Science and Engineering.  He was then a post-doc at IBM’s research lab in Zurich, Switzerland in the oxide superconductors and novel materials group managed by Nobel Prize winners J. Georg Bednorz and K. Alex Müller.  He has received various awards including an Alexander von Humboldt Research Fellowship and the MRS Medal.  He has published over 500 papers and 8 patents resulting in an h-index of 68 and over 21,000 citations.  He is a Fellow of both the American Physical Society and the Materials Research Society.

 

James WarrenJames Warren, technical program director for materials genomics, Material Measurement Laboratory, National Institute of Standards and Technology

Title: The Materials Genome Initiative: NIST, Data, and Open Science

 

Abstract: In this talk I will present an overview of the Materials Genome Initiative, covering the current and planned efforts across the Federal government. After an overview where I will provide insight into community-led activities, I will discuss our attempts at NIST to address some of the challenges to creating the materials innovation infrastructure that lies at the heart of the Materials Genome Initiative. In particular, NIST is now devoting considerable effort, in concert with its partners in industry, academia, and government, to develop the tools, standards, and techniques for (i) establishing model and data exchange infrastructure (ii) establishing best practices and new methods for ensuring data and model quality, and (iii) developing the Big Data analytics to enable “data driven” materials science.

 

To properly address these problems involves a deeper examination of the nature of materials data than is typical. In particular, the essential linkage between models and measurements implies that many of the conceptual challenges with materials data can be most efficiently resolved using methods that address the role of materials models as the core concept of the scientific method. This insight, and associated examinations of the manner in which we collect and disseminate data are the keys to overcoming the impediments to a materials innovation infrastructure.

 

Biography: James A. Warren is the director of the materials genome program in the Materials Measurement Laboratory of NIST.  After receiving his Ph.D. in theoretical physics at the University of California, Santa Barbara, which was preceded by an A.B. (also in Physics) from Dartmouth College in 1992, he took a position as an NRC post-doc in the metallurgy division at NIST. In 1995, with three other junior NIST staff members, he co-founded the NIST Center for Theoretical and Computational Materials Science, which he has directed since 2001. From  2005-2013 he was the leader of the thermodynamics and kinetics group. His research has been broadly concerned with developing both models of materials phenomena, and the tools to enable the solution of these models. Specific foci over the years has included solidification, pattern formation, grain structures, creep, diffusion, wetting, and spreading in metals. In 2010-11, Warren was part of the ad hoc committee within the National Science and Technology Council (NSTC) that crafted the founding whitepaper on the administration’s Materials Genome Initiative (MGI), and has served as the executive secretary of the NSTC MGI subcommittee since 2012.

 

Thomas DetzelThomas Detzel, senior manager GaN Technology Development, Infineon Technologies Austria AG

Title: Power Semiconductors

 

Abstract: Power semiconductors have become key innovation drivers in many technological areas of modern society. Efficient generation and use of electricity will be crucial in order to supply a growing population with electric power while preserving natural resources. Modern power semiconductors ensure feeding electricity from renewable energy sources, such as solar or wind, into the grid with low losses and provide efficient voltage conversion at various stages up to the point of use in any electrical appliance. In addition, power devices render cars more fuel efficient and enable electric mobility as well as advanced public transportation based on electric traction. This plenary talk will provide a deeper insight into various technologies, products, and applications of advanced power semiconductors. The main goal of power semiconductor research is the reduction of the area specific on-state resistance and switching losses, as well as increasing corresponding breakdown voltage. A particular focus will be on novel semiconductor materials, such as gallium nitride (GaN), required for revolutionary developments aiming at ever-increasing power density and efficiency. The main benefit of the wide-band-gap semiconductor GaN originates from its high electrical breakdown field and superior electron mobility compared to silicon, allowing very compact and fast switching devices. The advantageous use of GaN and its exciting material development will be discussed.

 

Biography: Thomas Detzel received the M.S. degree in physics from the University of Konstanz, Konstanz, Germany, and the Ph.D. degree in surface and thin-film physics in 1994 from the Max-Planck-Institute Garching near Munich, Germany. Afterwards he was a Postdoc with the Institut de Physique et Chimie des Matériaux de Strasbourg, Strasbourg, France. In 1995, he was with Rodel Europe GmbH, where he was an application manager for chemical–mechanical polishing. In 1999, he joined Infineon Technologies Austria AG, Villach, Austria, where he was responsible for the metallization development of power integrated circuits. He has been the project manager of different power device developments since 2004, and was leading the research project robust metallization and interconnect at the Competence Center for Automotive and Industrial Electronics from 2006-2011. Since 2011 he has been managing the technology development group for GaN power devices at Infineon Villach. Detzel is an alumnus of the German National Academic Foundation and a member of the German Physical Society.


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