Abstract:
This symposium focuses on recent advances and developments in semiconductors and microelectronics and their manufacturing processes. Topics of interest include devices in memory and data storage, quantum information science, emerging materials such as hybrid materials, organics and hetero-structures, such as 2D hetero-interfaces, for flexible electronics and optoelectronics. Contributions that connect device design/fabrication, defects and interfaces to structure and device performance are of particular interest.
The goal is to create an international and interdisciplinary forum for researchers from industry, academia, and national laboratories to exchange ideas and foster collaborations. Board areas of interest include: the modeling and simulation to predict device properties; Role of defects, interface; synthesis and manufacturing process for integration; Specific devices of interest are memory and data storage devices, memristive devices, transistors, detectors and flexible electronics.
Lead Organizers:
Wanyi Nie, SUNY University at Buffalo, wanyinie@buffalo.edu
Aiping Chen (apchen@lanl.gov)
Proposed Sessions/Topics:
• Theory, modeling and first principles calculations of devices performance and properties
• Role of defects, interface and synthesis/fabrication process on device properties
• Ohmic and Schottky contacts for devices
• Memristive switching and performance
• Memory and data storage devices
• Next generation microelectronics
• Dielectrics and ferroelectrics for device applications (e.g., gate dielectric and energy storage)
• Low dimensional materials for memory devices (e.g., van der Waals heterostructures) and transistors
• Solution grown semiconductors, flexible electronics
• Emerging optoelectronics and detectors (e.g., solar cells, Photoelectrochemical water-splitting cells, photodetectors, X-ray detectors, etc)
Sponsored By
