Elizabeth Paisley is a Principal Member of the Technical Staff at Sandia National Laboratories in Albuquerque, New Mexico. Elizabeth received her B.S. and Ph.D. in Materials Science and Engineering from North Carolina State University. At NCSU she was the recipient of an NSF graduate research fellowship for her work on the development of novel thin film oxide growth techniques to facilitate polarity coupling at polar semiconductor | ferroelectric interfaces for tunable logic.
Prior to joining Sandia, Elizabeth was a Senior Process Engineer at HexaTech Inc., where she studied homo-epi aluminum nitride growth for ultra-wide band gap power and UV-C light emitting diodes. In 2014, Elizabeth joined Sandia as a post-doctoral researcher where her work focused on thin film oxide growth for ultra-wide bandgap gate dielectrics and tunable thermal conductors. In 2016, Elizabeth joined the Technical Staff of Sandia as the Surface Science Lab Lead in the Analytical and Materials Science group. Her group studied spectroscopic analysis of interface- and surface-mediated effects of oxide systems and oxide thin film growth. In 2017 Elizabeth was part of a team that received an R&D 100 Award for their work on Ultra-Wide Bandgap Power Electronics. Elizabeth was promoted to Principal Member of the technical staff in 2020 and currently serves as the project manager and lead in several areas related to electronic materials applications. She has published over 35 publications in the area of structure-property relationships in electronic materials.
Elizabeth currently serves as the chair of the Electronics Division of the American Ceramics Society Outreach Committee, as the Chair of the Industrial Advisory Board for the NSF I/UCRC Center for Dielectrics and Piezoelectrics, and serves on the Executive Committee of the New Mexico American Vacuum Society.