In 2019, three scientists won the Nobel Prize in Chemistry for their work developing lithium-ion batteries. A recent review article by ACerS Fellow Arumugam Manthiram traces the work done by John Goodenough’s group on oxide cathodes.
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The spread of the coronavirus in the United States has thrown into sharp focus the problem of digital divide—unequal access to information and communication technologies. Although recent federal and local initiatives have worked to close this divide, there is still much work to be done.
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Ferroelectric field-effect transistors are nonvolatile memory devices that nondestructively read stored data. However, data retention times in these devices are short. Purdue University researchers suggest a modification to conventional Fe-FET structure could overcome this obstacle.
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Classic physics teaches there are four states of matter, but better understanding of matter’s more exotic properties has led to identification of additional states. New studies suggest the possibility of two new electronic states of matter.
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Flip phones seem to be making a comeback—Samsung recently debuted its latest device in a slate of foldable phones currently on the market. But the electronics giant’s new model is the first to feature a foldable glass display—or does it?
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At the recent Consumer Electronics Show in early January 2020, new devices and solutions centered around smart home technologies—but will new solutions for energy management lead to the next evolution of smart homes?
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Previous attempts to increase transparency of ferroelectric crystals have decreased piezoelectricity. An international team of scientists led by The Pennsylvania State University and Xi’an Jiaotong University now shows that selective engineering of domain walls can improve both properties.
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The 11th annual Electronic Materials and Applications Conference (EMA 2020) took place in Orlando on Jan. 22–24, 2020. Ferroelectricity was a big topic of discussion this year, in addition to various properties of complex oxides.
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Since 2007, more energy-efficient lighting has been replacing incandescent light bulbs in preparation of federal standards set to become effective this year. The Trump administration rejected these standards last month, but incandescent bulbs still are on their way out.
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Hafnium oxide-based ferroelectrics are promising materials for nonvolatile memory devices, as they are compatible with modern semiconductor technologies. Researchers led by the Moscow Institute of Physics and Technology came up with a unique method to better characterize these materials.
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