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S14: Oxide Materials for Nonvolatile Memory Technology and Applications

PACRIM 10

 

Nonvolatile semiconductor memory (NVSM) can work as a standalone nonvolatile memory or an embedded memory. NVSMs are widely applied in advanced computer, consumer, and communication (3C) electronic systems. Today the mainstream NVSM is flash memory. However, flash memory has drawbacks, such as high operation voltage, low operation speed, and poor retention time due to the increasing leakage current with device scaling. Therefore, various emerging nonvolatile memories have been proposed to possibly replace conventional flash memory. These alternative memories include ferroelectric memory, phase change memory, magnetic memory, and resistive switching memory. Oxide materials are important elements in future flash memory and alternative memories. For technological applications, high performance and reliability are required, which strongly depend on the fundamental aspects of oxide materials, processing technologies and their properties. The purpose of this symposium is to provide a platform for leading researchers on nonvolatile memory materials and technology worldwide to discuss and exchange their ideas, to prospect the development of the field of memory materials and technology, and to share their valuable experiences.

 

Proposed Symposium Topics

  • Fundamentals and Processing of Oxide Films for Memory Applications
  • Dielectric and Ferroelectric Oxide Materials for Memory Applications
  • High-κ Dielectrics in Flash and Charge-Trap Memory Devices
  • Oxide Materials for Ferroelectric Memory Applications
  • Oxide Materials for Magnetic and Multiferroic Memory Applications
  • Oxide Films with Resistive Switching Behaviors
  • Insulator-Metal Transitions in Metal Oxides
  • Oxide Interfaces and Correlated Electrons for New Electron Devices
  • Nonvolatile Memory Devices and Their Applications

Symposium Organizers
Tseung-Yuen Tseng, National Chiao Tung University, Taiwan
Ryuji Ohba, Toshiba Corporation, Japan
Daniele Ielmini, Politecnico di Milano, Italy
I-Wei Chen, University of Pennsylvania, USA
Jean-Pierre Leburton, University of Illinois at Urbana-Champaign, USA
Fu-Liang Yang, National Nano Device Laboratories, Taiwan
Ming Liu, Chinese Academy of Sciences, China

 

Points of Contact
Tseung-Yuen Tseng, 886-3-5731879
Daniele Ielmini, +39-02-2399-6120

 


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